jiang su changjiang electronics technology co., ltd to - 92 plastic - encapsulate transistors 8050 ss transistor ? npn ? features power dissipation p cm : 1 w ? t amb=25 ??? collector current i cm : 1.5 a c ollector - base voltage v ( br ) cbo : 40 v oper ating and storage junction temperature range t j ? t stg : - 5 5 ?? to +150 ?? electrical characteristics ? t amb =25 ?? unless otherwise specified ? p arameter symbol test conditions min typ max unit collector - base breakdown voltage v(br) cbo i c = 100 | a ? i e =0 40 v c ollector - emitter breakdown voltag e v(br) ceo i c = 0.1 ma , i b =0 25 v emitter - base breakdown voltage v(br) e b o i e = 100 | a ? i c =0 5 v collector cut - off current i cbo v cb = 40 v , i e =0 0.1 | a collector cut - off current i ceo v c e = 20 v , i b =0 0.1 | a emitter cut - off cur rent i ebo v e b = 5 v , i c =0 0.1 | a h fe ? 1 ? v ce = 1 v , i c = 100 m a 85 300 dc current gain h fe ? 2 ? v ce = 1 v , i c = 800 m a 40 collector - emitter saturation voltage v ce (sat) i c = 800 ma, i b = 80 m a 0.5 v b ase - emitter saturation voltage v be (sat) i c = 800ma , i b = 80 m a 1.2 v transition frequency f t v ce = 10 v, i c = 50ma f =30 mhz 100 mhz classification of h fe (1) rank b c d range 85 - 160 120 - 200 160 - 300 1 2 3 to ?a 92 1.emitter 2. collector 3 . base
d b e a a1 c l d1 e e1 t o-92 p ackage outline dimensions symbol a a1 b c d d1 e e e1 l ? min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 2.440 14.100 0.000 max 3.700 1.400 0.550 0.510 4.700 4.700 2.640 14.500 1.600 0.380 min 0.130 0.043 0.015 0.014 0.173 0.135 0.169 0.096 0.555 0.000 max 0.146 0.055 0.022 0.020 0.185 0.185 0.104 0.571 0.063 0.015 dimensions in millimeters dimensions in inches 0.050typ 1.270typ |?
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